Low-temperature poly-Si nanowire junctionless devices with gate-all-around TiN/Al2O3 stack structure using an implant-free technique
نویسندگان
چکیده
In this work, we present a gate-all-around (GAA) low-temperature poly-Si nanowire (NW) junctionless device with TiN/Al.
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عنوان ژورنال:
دوره 7 شماره
صفحات -
تاریخ انتشار 2012